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MMBTSD1781
NPN Silicon Epitaxial Planar Transistor Medium Power Transistor The transistor is subdivided into two group Q and R according to its DC current gain.
SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C)
O
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
1)
Symbol VCBO VCEO VEBO IC ICP Ptot Tj TS
Value 40 32 5 0.8 1.5 200 150 -55 to +150
Unit V V V A (DC) A (Pulse) mW
O
1)
C C
O
Single pulse Pw = 100 ms
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 3 V, IC = 100 mA Current Gain Group Collector Emitter Breakdown Voltage at IC = 1 mA Collector Base Breakdown Voltage at IC = 50 A Emitter Base Breakdown Voltage at IE = 50 A Collector Cutoff Current at VCB = 20 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Transition Frequency at VCE = 5 V, -IE = 50 mA, f = 100 MHz Output Capacitance at VCB = 10 V, IE = 0 A, f = 1 MHz Q R hFE hFE V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO VCE(sat) fT Cob 120 180 32 40 5 150 15 270 390 0.5 0.5 0.4 V V V A A V MHz pF Symbol Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 16/12/2005
MMBTSD1781
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 16/12/2005

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